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 RLS139
Diodes
Low-leakage Switching Diode
RLS139
!Applications High speed switching !External dimensions (Units : mm)
!Features 1) High reliability. 2) Small surface areas mounting type. (LLDS (LL-34) ) 3) The typical reverse current is extrermely low of 0.45nA.
CATHODE BAND 0.4 0.4
1.40.1
3.4
+0.2 -0.1
1.5Max.
!Construction Silicon epitaxial planar
ROHM : LLDS JEDEC : LL-34 Common : mini-MELF
!Absolute maximum ratings (Ta=25C)
Parameter
Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1ms) Power dissipation Junction temperature Storage temperature
Symbol VRM VR IFM IO Isurge P Tj Tstg
Limits 90 80 400 130 600 300 175 -65~+175
Unit V V mA mA mA mW C C
!Cathode band colors
Type RLS139 1st Color Band 2nd Color Band Gray Gray
!Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. Typ. 1.0 0.45 2 30 Max. 1.2 20 5 50 Unit V nA pF ns IF=100mA VR=30V VR=0.5V, f=1MHz VR=6V, IF =10mA, RL =50 Conditions
RLS139
Diodes
!Electrical characteristics curves (Ta=25C)
100
FORWARD CURRENT : IF (mA)
50
REVERSE CURRENT : IR (nA)
100C
CAPACITANCE BETWEEN TERMINALS : CT (pF)
200
100
6 f=1MHz 5 4 3 2 1 0 0
50 20 10 5 2 1
125C 75C
20 10 5 2 1 0.5 0.2 0.1 0 5 10 15 20 25 30 35 40
Ta=25C 50C 75C
0.5 0.2 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE : VF (V)
25C -25C
5
10
15
20
25
30
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristics
100
10
SURGE CURRENT : Isurge (A)
REVERSE RECOVERY TIME : trr (ns)
VR=6V Ta=25C Irr=1/10IR 75
PULSE 8 Single pulse
6
50
4
25
2
0 0
5
10
15
20
25
30
0 0.1m
FORWARD CURRENT : IF (mA)
1m 10m 100m 1 PULSE WIDTH : Tw (ms)
10
Fig. 4 Reverse recovery time characteristics
Fig.5 Surge current characteristics
0.01F
D.U.T.
5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE
Fig. 6 Reverse recovery time (trr) measurement circuit


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